Prof. Harry E. Ruda
University
of Toronto, Canada
Email: [email protected]
Qualifications
1982 Ph.D.,
Massachusetts Institute of Technology, USA, Semiconductor Materials and Solid
State Physics
1979 B.Sc., London University, England,
Materials Physics
Publications
(Selected)
-
A.
Shik, C. Fernandes and H.E. Ruda, "Hall Effect in nanowires", J.
Appl. Phys., (2014): Accepted, JR14-5081R
-
A.
Chen, B.-B. Li, B. Miljkovic, C. de Souza, K.Zhu, and H.E. Ruda,
"Improving the oxidation potential of Sb-doped SnO2electrode by Zn/Sb
co-doping",Applied Phys. Lett., Accepted (2014)
-
Y.
Song, W. Yin, Y.-H. Wang, J.-P. Zhang, Y. Wang, R. Wang, J. Han, W. Wang, S.V.
Nair and H.E. Ruda, "Magneto-Plasmons in Periodic Nanoporous
Structures", Nature: Scientific Reports, 4, 4991 (2014)
-
Y.Song,
W.Yin, C.Fernandes and H.E.Ruda, “Fabrication of one-dimension ZnSe and ZnO
nanostructures via anodic alumina template assisted vapor-liquid-solid growth
process”, Thin Solid Films, 548, 130 (2013)
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Y.Song,
Y.Wang, B.B.Li, C.Fernandes and H.E.Ruda, “Interface interaction induced
ultra-dense nanoparticles assemblies”, Nanoscale, 5, 6779 (2013)
-
T.V.C.
Rao, S.V. Nair, H.E. Ruda, J. Antoszewski, J.B. Rodriguez, E. Plis, S. Krishna
and L. Faraone, "Electrical transport in InAs/GaSb superlattice: Role of
surface states and interface roughness", Semi. Sci. Technol., 27, 105025
(2012)
-
B.
Qiao, K. Song, H.E. Ruda, "Characteristics of coherence and information
for a Davydov soliton field", J. Modern Phys., 3, 1907 (2012)
-
A.
Hayat, P. Zareapour, S.Y. Zhao, A. Jain,I.Savelyev, M . Blumin, Z.Xu, A. Yang,
G.D. Gu, H.E. Ruda, A.M. Steinberg, and K.S. Burch, "Hybrid high
temperature superconductor-semiconductor tunnel diode", Phys. Rev. X2,
041019 (2012)
-
C.
Fernandes, H. Ruda, A. Saxena and C. de Souza, "Preparation of high
quality ZnSe nanowires dominated by excitonic emission", Phys. Stat. Sol.
C9, 2460 (2012)
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C.Y.
Chen, A. Shik, A. Pitani, A. Treducucci, D. Ercolani, L. Sorba, F. Beltram and
H.E. Ruda, "Electron beam induced current in InSb-InAs nanowire type III
heterostructures", Appl. Phys. Lett., 101, 063116 (2012)
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B.B.
Li,U. Philipose,C.F. de Souza and H.E. Ruda, "Role ofElectro-Deposition
Parameters on Preparing Tailored Dimension Vertically-Aligned ZnO Nanowires”,
J. Electrochem. Soc., 158, D282 (2011)
-
Y.
Sun, Rusli, M. Yu, J. Salfi, C. de Souza, H.E. Ruda, N. Singh, F.K. Lin, P. Lo,
D.L. Kwong, “Electrical characteristics and photocurrent spectralresponse of Si
nanowires p-i-n junctions” Optics Express, 19, 5464 (2011)
-
H.
Ruda and A. Shik, “Optical properties ofanisotropic porous
semiconductors", Appl. Phys. Lett., 99, 213111 (2011)
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R.
Cisek, V. Barzda, H.E. Ruda, and A. Shik, “Nonlinear optical properties of
semiconductor nanowires”, (Invited) IEEE J. Sel. Topics in Quant. Electron.,
PP(99), 1(2010)
-
B.
Liu, F. Yan, U. Philipose, N.P. Kherani, W. Shmayda, K.P. Chen and H.E. Ruda,
“Tritium beta-luminescence in ZnO nanowires”, J. Phys. D: Appl. Phys., 43,
415502(2010)
-
H.
Wan and H. Ruda, “A study of the growthmechanism of CVD grown ZnO nanowires”,
J. Mats. Sci.: Mater. Electron., 21, 1014(2010)
-
Z.
Li, J. Salfi, C. de Souza, P. Sun, S.V. Nair and H.E. Ruda, ”Room temperature
single nanowire ZnTe photoconductors grown by metalorganic chemical vapor
deposition”, Appl. Phys. Lett., 97, 063510(2010)
-
A.
Othonos, E. Lioudakis, D. Tsokkou, U. Philipose, H.E. Ruda, “Ultrafast time-resolved
spectroscopy of ZnSe nanowires: Carrierdynamics of defect-related states”, J.
Alloys and Compounds, 483, 600(2009)
-
T.
Xu, M.S. Wheeler, H.E. Ruda, M. Mojahedi, and J.S. Aitchison, " The
influence of material absorption on the quality factor of photonic crystal
cavities", Optics Express, 17, 8343 (2009)
-
T.
Xu, M.S. Wheeler, S.V. Nair, H.E. Ruda, M. Mojahedi and J.S. Aitchison, “Highly
confined mode above the light line in a two dimensionalphotonic crystal slab”,
Appl. Phys. Lett., 93, 241105(2008)
-
A.
Petukhova, A.S. Paton, Z. Wei, I. Gourevich, S.V. Nair, H.E. Ruda, A. Shik and
E. Kumacheva, “Polymer multilayer microspheresloaded with semiconductor quantum
dots”, Adv. Functional Mater., 18, 1961(2008)
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